Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field

► Band structure of GaAs/AlxGa1−xAs superlattice under an ILF is investigated. ► Dramatic variation of the confinement potential in the well/barrier region is predicted. ► ILF creates an additional geometric confinement on the electronic states. ► Significant changes come in the electronic energy levels and density of states.