Emission and elastic strain in InAs dot-in-a well InGaAs/GaAs structures

► Photoluminescence of InAs QDs embedded in InxGa1−xAs/GaAs QWs with x in the range from 0.10 to 0.25 is studied. ► Non-monotonous variation of InAs QD PL intensity and peak position versus x is detected. ► XRD peaks related to (4 0 0) plane in GaAs QWs shift versus x non-monotonously. ► Elastic strain changes in QWs with x due to the different lattice mismatches at QD and QW interfaces.