Structural and photoluminescence properties of Si nanoclusters obtained by ion implantation into Si3N4 films

► Si nanoclusters embedded in Si nitride films by ion implantation. ► PL behavior investigated by changing implantation and annealing parameters. ► After annealing at 475 °C two superimposed PL bands were observed. ► Structural evolution of the a-Si nanoclusters were characterized by TEM analysis.