Effects of reflector-induced interferences on light extraction of InGaN/GaN vertical light emitting diodes

► Effects of the metal reflector in InGaN vertical LED on extraction efficiency (ηext) were studied. ► A large F-P cavity model was provided for investigating vertical LED structures. >It shows the dependence of ηext on the distance (d) between active region and the reflector. ► Optimal d and the corresponding ηext are directly related to the type of the metal reflector. ► This study is very important for the realization of future high-power LED applications.