کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540216 871294 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature growth of polycrystalline SiC by catalytic CVD from monomethylsilane
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Low-temperature growth of polycrystalline SiC by catalytic CVD from monomethylsilane
چکیده انگلیسی

Microcrystalline silicon carbide (μc-SiC) has several applications, such as solar cells, light-emitting diodes and as optical coating for solar cells. Hydrogenated amorphous silicon carbide (a-SiC:H) grows by plasma enhanced CVD, even under hydrogen diluted conditions. High concentration of atomic hydrogen from catalytic CVD could promote lower temperature growth of μc-SiC under the same conditions as a-SiC:H without plasma. In the present study, μc-SiC films have been successfully grown by catalytic CVD (hot-filament catalysis) from monomethylsilane and hydrogen on (1 0 0) silicon substrates maintained at 300 °C. The optimal chamber pressure is 1.0 Torr and the optimal concentration of monomethylsilane in the hydrogen carrier gas is 1%. FTIR spectra of films obtained under these conditions show strong Si–C peaks.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issue 1, January 2006, Pages 41–44
نویسندگان
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