کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5402193 | 1392728 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD](/preview/png/5402193.png)
چکیده انگلیسی
ZnO film was firstly prepared by PA-MOCVD method on the substrate pre-coated with GaAs interlayer. Hall measurement found that the GaAs interlayer had important effects on the electrical behavior of the ZnO film. It could make the ZnO film convert to p-type conductivity. The XPS results confirmed that the acceptor was arsenic. And the acceptor level was 130Â meV above the ZnO valence band maximum. Low-temperature PL measurement was introduced to investigate the optical properties of both as-grown n-type and arsenic doped p-type ZnO films. Then, based on this technology, ZnO homojunction light emitting device (LED) was fabricated with arsenic doped p-type ZnO and unintentionally doped n-type ZnO on GaAs/p+-Si substrate. Its current-voltage (I-V) character showed a typical rectification behavior, which was different from the n-ZnO/p+-Si structure. The UV-visible (385-580Â nm) electroluminescence was detected under relatively low current injection condition from the n-ZnO/p-ZnO/p+-Si LED.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 131, Issue 2, February 2011, Pages 280-284
Journal: Journal of Luminescence - Volume 131, Issue 2, February 2011, Pages 280-284
نویسندگان
Xiaochuan Xia, Zhifeng Shi, Long Zhao, Wang Zhao, Xin Dong, Baolin Zhang, Guotong Du,