SiC-DACFET

The nm-range abrupt doping profiles in SiC epitaxial layers are stable even after the high temperature process because SiC crystal exhibits little diffusion of impurities. Growth of the SiC delta-doped layers have been reported by our group and the others. We believe that the well-designed delta-doped epitaxial layers for the FET channels extend possibility of the power SiC FET. We proposed the SiC Delta-doped Accumulation Channel MOSFET (DACFET) consisting of the delta-doped layers for MOS channel and reported its high MOS-channel mobility.The vertical hot-wall-type CVD system was used to grow SiC epitaxial layers. The pulse valve, which supplied short (100 cm2/V s. The vertical DACFET, whose blocking voltage was >600 V, was fabricated with the double-implantation MOS process. Ron of the normally-off 2 μm-gate DACFET was measured to be 13 mΩ cm2. Current density was observed to be >140 A cm−2 larger than Si-IGBT. Shortening of gate length and unit cell size of the SiC-DACFET using high-resolution lithography will result in Ron <7 mΩ cm2.