کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540242 | 871294 | 2006 | 4 صفحه PDF | دانلود رایگان |
Three examples are given, which show that ion implantation and electron irradiation can drastically modify the electrical properties of SiC and SiC-based MOS capacitors. (1) It is demonstrated that sulphur ions (S+) implanted into 6H-SiC act as double donors with ground states ranging from 310 to 635 meV below the conduction bandedge. (2) Co-implantation of nitrogen (N+) – and silicon (Si+) – ions into 4H-SiC leads to a strong deactivation of N donors. Additional experiments with electron (e−)-irradiated 4H-SiC samples (E(e−) = 200 keV) support the idea that this deactivation is due to the formation of an electrically neutral (Nx–VC, y)-complex. (3) Implantation of a surface-near Gaussian profile into n-type 4H-SiC followed by a standard oxidation process leads to a strong reduction of the density of interface traps Dit close to the conduction bandedge in n-type 4H-SiC/SiO2 MOS capacitors.
Journal: Microelectronic Engineering - Volume 83, Issue 1, January 2006, Pages 146–149