Unipolar SiC power devices and elevated temperature

The paper discusses the limitations and perspectives of unipolar SiC devices for the use in high temperature applications. After clarifying the requirements for the next generation high temperature semiconductor components, these data are reflected to the performance of devices available or in development today. For Schottky barrier diodes, the limits of today’s standard technology are shown and the strategy for developing an improved device is sketched. For switching devices, the two competing concepts – normally on JFETs and normally off MOSFETs – are compared. Advantages for JFET structure are worked out, mainly based on the fact that no oxide interface is involved. The theoretical considerations are checked by experiments.