کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540257 1450380 2013 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Laser-assisted ultrathin die packaging: Insights from a process study
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Laser-assisted ultrathin die packaging: Insights from a process study
چکیده انگلیسی

Laser-assisted assembly of ultrathin, ultrasmall bare dice holds promise for enabling a new class of very low cost flexible electronic devices with applications in many areas. But this advanced packaging technology will be of little use if two important parameters are not considered – transfer rate and precision/accuracy of die placement. Both parameters depend on the laser process parameters and the properties of the consumable materials used. Reported are results from a process study designed to investigate the effects of the laser pulse parameters, the adhesive layer properties, and the method of wafer dicing on the transfer rate and placement precision/accuracy when transferring ultrathin (50-μm thick) silicon dice using the thermo-mechanical selective laser-assisted die transfer (tmSLADT) technique developed by this team and reported in prior publications. It is shown that, when properly controlled, tmSLADT can transfer ultrathin bare dice with precision and accuracy compatible with those achievable by the conventional die placement methods but at a much higher transfer rate.

Figure optionsDownload as PowerPoint slideHighlights
► The rate and precision of laser-assisted ultrathin dice transfer are studied.
► Placement precision/accuracy is compatible with these of the conventional methods.
► Placement precision is not affected by the wafer dicing method.
► Transfer rates of RIE-singulated dice are better compared to laser-singulated dice.
► The most important process factor is the nature of laser transfer process.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 101, January 2013, Pages 23–30
نویسندگان
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