کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5402707 | 1392739 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of aligned silicon nanowire on silicon by electroless etching in HF solution
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of aligned silicon nanowire on silicon by electroless etching in HF solution Formation of aligned silicon nanowire on silicon by electroless etching in HF solution](/preview/png/5402707.png)
چکیده انگلیسی
It was demonstrated that the etching in HF-based aqueous solution containing AgNO3 and Na2S2O8 as oxidizing agents or by Au-assisted electroless etching in HF/H2O2 solution at 50 °C yields films composed of aligned Si nanowire (SiNW). SiNW of diameters â¼10 nm were formed. The morphology and the photoluminescence (PL) of the etched layer as a function of etching solution composition were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and photoluminescence. It was demonstrated that the morphology and the photoluminescence of the etched layers strongly depends on the type of etching solution. Finally, a discussion on the formation process of the silicon nanowires is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 129, Issue 12, December 2009, Pages 1750-1753
Journal: Journal of Luminescence - Volume 129, Issue 12, December 2009, Pages 1750-1753
نویسندگان
N. Megouda, R. Douani, T. Hadjersi, R. Boukherroub,