کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5402769 | 1392741 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems](/preview/png/5402769.png)
چکیده انگلیسی
The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300Â K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 130, Issue 6, June 2010, Pages 1000-1004
Journal: Journal of Luminescence - Volume 130, Issue 6, June 2010, Pages 1000-1004
نویسندگان
Yeu-Jent Hu, Yi-Wen Huang, Chia-Hui Fang, Jen-Cheng Wang, Yu-Fang Chen, Tzer-En Nee,