کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5402770 | 1392741 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stable ultraviolet photoluminescence emission in n-type porous silicon
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Stable ultraviolet photoluminescence emission in n-type porous silicon Stable ultraviolet photoluminescence emission in n-type porous silicon](/preview/png/5402770.png)
چکیده انگلیسی
This very paper is focusing on the investigation of porous silicon preparation with n-type silicon wafer by means of electrochemical anodization in the dark and, particularly, on its stable ultraviolet photoluminescence emission. A lateral electrical potential was applied, for this purpose, on silicon wafers, driving the electrons away and letting holes appear on the surface of the silicon wafer to enhance the electrochemical etching process. Characterizations have been made with scanning electronic microscope, fluorescence spectrophotometer and Fourier transform infrared spectroscope. An ultraviolet photoluminescence emission of 370Â nm is found in the as-prepared n-type porous silicon, which seems to be well associated with the formation of oxygen-related species (twofold coordinated silicon defect) during the anodic oxidation. The result characterized by photo-bleaching performance indicates that the ultraviolet photoluminescence emission is so stable-only 7% reduction within 3600Â s. Meanwhile the morphology of as-prepared n-type porous silicon is investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 130, Issue 6, June 2010, Pages 1005-1010
Journal: Journal of Luminescence - Volume 130, Issue 6, June 2010, Pages 1005-1010
نویسندگان
Yunsen Zhang, Zhimei Yang, Donglai Liu, Eryong Nie, Xue Bai, Zhiwei Li, Huabing Song, Yu Zhou, Wenyu Li, Min Gong, Xiaosong Sun,