کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5403234 | 1392754 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Correlation between impurities in Fe-Si amorphous layers synthesized by Fe implantation and photoluminescence property of β-FeSi2 precipitates in Si
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Correlation between impurities in Fe-Si amorphous layers synthesized by Fe implantation and photoluminescence property of β-FeSi2 precipitates in Si Correlation between impurities in Fe-Si amorphous layers synthesized by Fe implantation and photoluminescence property of β-FeSi2 precipitates in Si](/preview/png/5403234.png)
چکیده انگلیسی
Completely amorphous Fe-Si layers are formed by Fe implantation into Si substrate at a dosage of 5Ã1015 cmâ2 using a metal vapor vacuum arc (MEVVA) ion source under 80 kV extraction voltage and cryogenic temperature. After thermal annealing, β-FeSi2 precipitates are formed in Si matrix. The influence of impurities in these amorphous Fe-Si layers on the photoluminescence (PL) from β-FeSi2 precipitates is investigated. PL is found to be significantly enhanced by optimizing the impurity concentration and annealing scheme. After 60 s of rapid thermal annealing (RTA) at 900 °C, β-FeSi2 precipitates in medium boron-doped Si substrate give the strongest PL intensity without boron out-diffusion from them.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 128, Issue 11, November 2008, Pages 1841-1845
Journal: Journal of Luminescence - Volume 128, Issue 11, November 2008, Pages 1841-1845
نویسندگان
C.M. Sun, H.K. Tsang, S.P. Wong, N. Ke, S.K. Hark,