کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5403555 | 1505929 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films](/preview/png/5403555.png)
چکیده انگلیسی
Er-doped Si-SiO2 and Al-Si-SiO2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er3+: 4I13/2â4I15/2 emission of Er-doped Si-SiO2 yields a maximum intensity for annealing at 700-800 °C. 4I13/2â4I15/2 peak emission for Er-doped Al-Si-SiO2 at 1525 nm is shifted from that for Er-doped Si-SiO2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4I13/2â4I15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4I13/2â4I15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4I11/2 level in Er-doped Si-SiO2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 128, Issues 5â6, MayâJune 2008, Pages 897-900
Journal: Journal of Luminescence - Volume 128, Issues 5â6, MayâJune 2008, Pages 897-900
نویسندگان
C. Rozo, L.F. Fonseca, D. Jaque, J.GarcÃa Solé,