کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5403897 | 1505931 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
P-type conductivity and stability of nitrogen-doped zinc oxide prepared by magnetron sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nitrogen (N)-doped zinc oxide (ZnO:N) films were deposited on quartz glass substrates at 510 K by reactive radio-frequency magnetron sputtering of a ZnO target with sputtering gas of nitrogen. The as-grown ZnO:N shows insulating at room temperature, but behaves p-type conduction with resistivity of 456 Ω cm, carrier concentration of 1.2Ã1017 cmâ3 and Hall mobility of 0.1 cm2/V s in the dark after annealed at 860 K for 1 h under 10â4 Pa. Unfortunately, the p-type conduction is not stable in the dark and transforms into n-type gradually. After irradiated by sunlight for a few of minutes, the n-type ZnO:N reverts to metastable p-type one in the dark and remains p-type conductivity in the brightness. Formation and stability of the p-type ZnO:N are discussed in the present paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volumes 122â123, JanuaryâApril 2007, Pages 191-194
Journal: Journal of Luminescence - Volumes 122â123, JanuaryâApril 2007, Pages 191-194
نویسندگان
B. Yao, L.X. Guan, G.Z. Xing, Z.Z. Zhang, B.H. Li, Z.P. Wei, X.H. Wang, C.X. Cong, Y.P. Xie, Y.M. Lu, D.Z. Shen,