Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals

We construct the theory of carriers confined in Si quantum dots with finite energy barriers for electrons and holes in the framework of the multiband effective mass theory. We apply this theory for theoretical modeling of the excitation of erbium inside and outside of Si nanocrystals in SiO2 matrix due to the Auger process induced by the recombination of a confined electron-hole pair as well as the intraband transitions of “hot” confined carriers. Auger de-excitation processes of the Er3+ ion leading to the quenching of erbium luminescence are discussed as well.