کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5404033 | 1392771 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical losses and absorption cross-section of silicon nanocrystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
 Si-rich silicon oxide and SiO2 (SRSO)/SiO2 multilayer (ML) samples were grown by reactive magnetron sputtering and then annealed at high temperature to induce the formation of Si-nc with mean size of 3-4 nm and density of about 3.5Ã1018 cmâ3 as deduced from high resolution TEM micrographs. Refractive index and thickness have been determined by m-line measurements, which have shown a birefringence of about 1.5% due to the ML structure. Rib-loaded waveguides have been fabricated to measure propagation losses in the visible-infrared range. The analysis of the different contributions to optical losses such as Mie scattering and scattering due to waveguide roughness has allowed us to isolate the contribution due to the absorption losses and thus to extract the absorption cross-section at different wavelengths. Values of about 3.5Ã10â18 cm2 have been found at 830 nm, increasing with decreasing of the wavelength.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 121, Issue 2, December 2006, Pages 344-348
Journal: Journal of Luminescence - Volume 121, Issue 2, December 2006, Pages 344-348
نویسندگان
N. Daldosso, M. Melchiorri, L. Pavesi, G. Pucker, F. Gourbilleau, S. Chausserie, Ali Belarouci, X. Portier, C. Dufour,