کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5404073 | 1392771 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Luminescence properties of Mn2+ doped Zn2SiO4 phosphor films synthesized by combustion CVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Luminescence properties of Mn2+ doped Zn2SiO4 phosphor films synthesized by combustion CVD Luminescence properties of Mn2+ doped Zn2SiO4 phosphor films synthesized by combustion CVD](/preview/png/5404073.png)
چکیده انگلیسی
Zn2SiO4:Mn2+ phosphor films were successfully prepared by a novel combustion chemical vapor deposition (CCVD) method. In the CCVD process, a flammable solution, containing precursor materials, is atomized and sprayed through a specially designed nozzle and ignited to form a combustion flame. This enables crystallized films to be directly deposited onto a substrate in open-atmosphere with no post deposition heat treatment. SEM images indicated that the film deposited at 1200 °C consisted of densely packed particles with a fine grain size of several 100 nm. Strong Photoluminescence (PL) and cathodoluminescence (CL) intensities were observed with Zn2SiO4:Mn2+ samples deposited at a substrate temperature of 1200 °C exhibiting the best crystallinity and highest luminescence. The optimum doping level for films deposited using CCVD was found to be â¼4 mol% Mn2+ of starting concentration, with a maximum CL luminescence equivalent to 53% of the luminescence measured from a commercial powder phosphor. A relatively fast CL decay with life time about 0.6-0.7 ms was also observed from these films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 121, Issue 2, December 2006, Pages 595-600
Journal: Journal of Luminescence - Volume 121, Issue 2, December 2006, Pages 595-600
نویسندگان
Z.T. Kang, Y. Liu, B.K. Wagner, R. Gilstrap, M. Liu, C.J. Summers,