کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540408 | 871311 | 2011 | 4 صفحه PDF | دانلود رایگان |
Focus ion beam (FIB) technology has been employed to fabricate quantum dot based devices such as the single electron transistor (SET) on a silicon substrate with Cr/Au/Al2O3 film stack. It was discovered that the dwell time of FIB gallium beam on an area impacted the dosage of gallium ions implanted into the insulating substrate, creating a highly doped region which could lead to device leakage current. This work focus on the potential electron transport possible when an over-dosed gallium rich Al2O3 layer will lead to leakage current between otherwise electrically isolated contact pads. Using the Keithley 4200 semiconductor parametric analyzer (SPA) and the energy dispersive X-ray spectrometer (EDS) analysis; we demonstrate the detrimental effect of leakage current in the range of pA, observed between drain/source electrodes due to the high dose of gallium implanted into the insulating Al2O3. The optimized FIB etching parameters to produce a high quality of device functionality with no leakage current is also demonstrated.
Figure optionsDownload as PowerPoint slideHighlights
► Focus ion beam (FIB) technology has been employed to fabricate single electron device with Cr/Au/Al2O3 film stack.
► The dwell time of FIB gallium beam on an area impacted the dosage of gallium ions implanted into the insulating substrate.
► Gallium contaminated insulator is a highly doped region which lead to device leakage current.
► The detrimental effect of leakage current in the range of pA is demonstrated using the Keithley 4200 semi-conductor parametric analyzer (SPA) and the energy dispersive X-ray spectrometer (EDS) analysis.
► The optimized FIB etching parameters to produce a high quality of device functionality with no leakage current is also demonstrated.
Journal: Microelectronic Engineering - Volume 88, Issue 8, August 2011, Pages 1906–1909