کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5404178 | 1505932 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation](/preview/png/5404178.png)
چکیده انگلیسی
In this paper, highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (<60 kW/cm2), PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2, a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-Ex) scattering process from two ground state excitons, where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2,3,4â¦â. Under excitation density of 300 kW/cm2, the stimulated emission originating from Ex-Ex scattering is obtained. When the excitation density is above 580 kW/cm2, the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volumes 119â120, JulyâOctober 2006, Pages 228-232
Journal: Journal of Luminescence - Volumes 119â120, JulyâOctober 2006, Pages 228-232
نویسندگان
Y.M. Lu, H.W. Liang, D.Z. Shen, Z.Z. Zhang, J.Y. Zhang, D.X. Zhao, Y.C. Liu, X.W. Fan,