Photoluminescence characterization of polycrystalline n-type Cu2O films

Electrodeposition was used to deposit Cu2O thin films on ITO substrates. Photoresponse of the film clearly indicated n-type behavior of Cu2O in photoelectrochemical cells. The temperature dependence of photoluminescence (PL) revealed that the spectra consist of donor-acceptor pair emissions and the recombination between electrons bound to donors and free holes. We observed that the dominant intrinsic defect, oxygen vacancies, creates a donor energy level at 0.38 eV below the bottom of the conduction band. As a result, this donor level acts as a center for both PL emissions and to produce n-type conductivity in the electrodeposited Cu2O films. In addition, an acceptor energy level at 0.16 eV from the top of the valence band was observed.