کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5404382 | 1392780 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Estimation of the acceleration ability for electrons in SiO2 and the tunneling effect
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Estimation of the acceleration ability for electrons in SiO2 and the tunneling effect Estimation of the acceleration ability for electrons in SiO2 and the tunneling effect](/preview/png/5404382.png)
چکیده انگلیسی
Silicon dioxide (SiO2) plays an important role in layered optimization scheme and solid-state cathodoluminescence (SSCL). Initially, it was believed that the SiO2 layer would (i) generate extra interface states contributing to a number of primary electrons available for exciting the luminescent centers, and/or (ii) act as acceleration layer resulted in gaining high energy for those electrons that would tunnel into the luminescent layer to excite luminescent centers. Based on the brightness vs. voltage (B-V) measurements, we deem that the latter case, i.e. acceleration and tunneling, is the dominant mechanism. A detailed discussion in terms of electrons acceleration and tunneling as the main contributions to the enhancement of brightness is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 117, Issue 1, March 2006, Pages 90-94
Journal: Journal of Luminescence - Volume 117, Issue 1, March 2006, Pages 90-94
نویسندگان
Fujun Zhang, Zheng Xu, Feng Teng, Shengyi Yang, Zhidong Lou, Ling Liu, Lijian Meng, Yanbing Hou, Yongsheng Wang, Xurong Xu,