Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

The impact of local deep-amorphization (DA) and subsequent solid-phase epitaxial regrowth (SPER) are studied for the co-integration of devices with hybrid surface orientation. Thin-body p-channel transistors with 20 nm thick film and HfO2 gate insulator/metal gate along several directions on a (1 1 0) substrate were fabricated and characterized. No deterioration of transconductance or threshold voltage was induced by DA/SPER process. Device co-integration using DA/SPER process is therefore a realistic option. 〈1 1 0〉 channel on (1 1 0) SOI film yields a 200% gain on the current for the (1 0 0) surface orientation. However, the benefit of it decreases with the channel length.

Comparison of drain current curves for different directions of the front channel. The benefit of <110> direction on (110) is clearly visible.Figure optionsDownload as PowerPoint slideHighlights
► Deep-amorphisation (DA) and solid-phase epitaxial regrowth (SPER) are used for SOI MOSFETs.
► Thin body p-channel MOSFETs along several directions on (110) film were characterized.
► No device degradation is found after DA/SPER process.
► <110> channels on (110) SOI film exhibit 200% gain in current.
► Co-integration of devices with hybrid surface orientation using DA/SPER is a realistic option.