کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540511 | 871316 | 2011 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling](/preview/png/540511.png)
We show that a thin epitaxial strontium oxide (SrO) interfacial layer enables scaling of titanium nitride/hafnium oxide high-permittivity (high-k) gate stacks for field-effect transistors on silicon. In a low-temperature gate-last process, SrO passivates Si against SiO2 formation and silicidation and equivalent oxide thickness (EOT) of 5 Å is achieved, with competitive leakage current and interface trap density. In a gate-first process, Sr triggers HfO2–SiO2 intermixing, forming interfacial high-k silicate containing both Sr and Hf. Combined with oxygen control techniques, we demonstrate an EOT of 6 Å with further scaling potential. In both cases, Sr incorporation results in an effective workfunction that is suitable for n-channel transistors.
In gate-first and gate-last process flows, a thin epitaxial strontium oxide (SrO) interfacial layer enables scaling of titanium nitride/hafnium oxide high-permittivity (high-k) gate stacks for field-effect transistors on silicon.Figure optionsDownload as PowerPoint slideHighlights
► Epitaxial strontium oxide (SrO) layers are integrated in TiN/HfO2 gate stacks on Si.
► In a gate-last process, SrO passivates Si.
► In a gate-first process, SrO triggers interfacial silicate formation.
► Equivalent oxide thickness of 5–6 Å is achieved, with further scaling potential.
► Effective workfunction is suitable for n-channel transistors.
Journal: Microelectronic Engineering - Volume 88, Issue 7, July 2011, Pages 1312–1316