کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540528 871316 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance
چکیده انگلیسی

Threshold voltage (VT) and mobility (μ) shifts due to process related variability and Negative Bias Temperature Instability are experimentally characterized in pMOSFETs. A simulation technique to include the time-dependent variabilities of VT and μ in circuit simulators is presented and used to evaluate their effects on CMOS inverters performance. The results show that mobility degradation under NBTI stresses could have to be considered for the evaluation of the circuit performance after device aging.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 7, July 2011, Pages 1384–1387
نویسندگان
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