Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions

Si and Se implantations have been systematically investigated in In0.53Ga0.47As. Different implant doses and various activation anneals with temperatures up to 700 °C have been examined. Raising Si implant dose from 1 × 1014 to 1 × 1015 cm−2 was found to increase the active doping concentration by about a factor of two. As confirmed by Transmission Electron Microscopy (TEM) and electrical measurements, the rest of the implanted Si ions remain as defects in the crystal and degrade the mobility. It was also confirmed from Secondary Ion Mass Spectrometry (SIMS) that the Si diffusivity in InGaAs is negligible up to 700 °C implant activation anneal making Si a suitable option for the formation of shallow junctions in InGaAs. The activation efficiency, sheet resistance, carrier density and mobility data of 25 keV Se and Si implanted InGaAs layers are also presented under various activation anneal temperatures.