Effects of Ar and O2 additives on photopatternable sol–gel etching in an SF6-based plasma for planar lightwave circuit fabrication

We present a novel study of the interaction of SF6-based plasmas with sol–gel materials in a parallel plate reactive ion etching (RIE) system. The purpose of these experiments was to obtain quantitative measures and optimisation of the RIE parameters, which can be used in the microfabrication of planar lightwave circuit (PLC) devices. The sulfur hexafluoride chemistry is chosen due to its excellent etching properties of SiO2, which is one of the components of the photopatternable sol–gel materials and is not present in typical photoresist materials. Fast process etching rate and good selectivity is achieved by varying SF6 flow and power delivered to the electrodes. The study also reveals a marginal influence of oxygen and argon flow on the character of the sol–gel etching. The experimental data obtained can be used as a reference for any sol–gel devices fabricated using widely available RIE reactors.