کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540613 | 871329 | 2010 | 5 صفحه PDF | دانلود رایگان |
We have considered multi-Gaussian distribution of barrier-heights for non-interactive barrier inhomogeneities in the inhomogeneous Schottky diodes, and we have shown the presence of the intersecting behavior in the forward-bias current–voltage (I–V) curves for the double-Gaussian distribution model at low temperatures. We have tried to eliminate this effect by generating I–V curves at lower temperatures with the bias-dependent barrier-height expression which leads to the ideality factors greater than unity. For this calculation, we have obtained the expressions for the barrier-height change and ideality factor, and for bias-dependency of the BH for the multi-Gaussian model by following the literature. We have shown that the experimental forward-bias I–V curves coincide with the theoretical ones using the bias-dependent inhomogeneous BH expression at low and high temperatures in the double-Gaussian distribution of BHs.
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2225–2229