کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540623 871329 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ohmic and rectifier properties of Al/Ligand(N-APTH) and Al/Cu(II)Complex contacts
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Ohmic and rectifier properties of Al/Ligand(N-APTH) and Al/Cu(II)Complex contacts
چکیده انگلیسی

We have produced a Ligand(N-APTH) and Cu(II)Complex of bidentate ligand containing a ring of the pyrimidine. Optical transmission measurements of the Ligand(N-APTH) and Cu(II)Complex thin films were performed by using a UV–Visible (UV–VIS) spectrophotometer. From the optical measurements, it was seen that the materials show semiconductor behaviors giving appropriate bandgaps with the values of 3.15 eV and 2.36 eV for Ligand(N-APTH) and Cu(II)Complex, respectively. With the pre-assumption that the material may exhibit a rectifier or ohmic behavior when it is brought into an appropriate contact with a metal, an attempt to explore the rectifying and ohmic properties of Al/Ligand(N-APTH)/Cu and Al/Cu(II)Complex/Cu contacts was made. As a result of current–voltage (I–V) measurements, it was discovered that the devices show excellent rectifier properties with a rectification ratio of about 10−3 for Al/Ligand(N-APTH)/Cu and 10−5 for Al/Cu(II)Complex/Cu rectifier contacts, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2282–2287
نویسندگان
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