کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540643 | 871329 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical transport properties in electroless-etched Si nanowire field-effect transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical transport properties in electroless-etched Si nanowire field-effect transistors Electrical transport properties in electroless-etched Si nanowire field-effect transistors](/preview/png/540643.png)
چکیده انگلیسی
We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag+ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2407–2410
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2407–2410
نویسندگان
Kyeong-Ju Moon, Ji-Hyuk Choi, Tae-Il Lee, Moon-Ho Ham, Wan-Joo Maeng, Inchan Hwang, Hyungjun Kim, Jae-Min Myoung,