Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

This paper shows the possibility to improve DC and RF electrical performances of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose. The drain–source saturation current and the DC transconductance increase when the devices are irradiated with a gamma dose of 42.8 krad(GaAs) and then remain constant up to 0.85 Mrad(GaAs). This improvement is attributed to a reduction of access resistances. In the same time, the Schottky diode and the current-gain cut-off frequency of these components are not degraded by the gamma irradiation. Moreover, the maximum output power density is improved by 18%. This paper demonstrates that it is possible to improve the component electrical performances by using an original method.