کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540668 | 871333 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nitrogen impurity effects on nickel silicide formation at low temperatures – New “nitrogen co-plasma” approach
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nickel based silicide films were prepared by annealing nickel–platinum layers deposited on n doped Si substrates. We report on the evolution of the phase formation and the redistribution of contaminants on blanket wafers during silicide formation as a function of the nitrogen gas flow introduces during Ni(Pt) deposition. Nitrogen incorporation creates a contamination as-deposited layer which modifies phase formation and changes nickel diffusion. Nitrogen is not incorporated in silicide formed. After a second anneal, the monosilicide forms excepted for high nitrogen quantity introduced where the Ni3Si2 is always observed. Monosilicide thermal stability is also improved by nitrogen co-plasma.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2005–2008
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2005–2008
نویسندگان
B. Imbert, M. Gregoire, S. Zoll, R. Beneyton, S. Del-Medico, C. Trouiller, O. Thomas,