| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 540688 | 871333 | 2008 | 4 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Phosphorous doped SOG as a pre-metal-dielectric for sub-50 nm technology nodes
												
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																																												موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی کامپیوتر
													سخت افزارها و معماری
												
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												چکیده انگلیسی
												The goal of this work is to find a substitute for chemically-vapour-deposited (CVD) Borophosphosilicate glass (BPSG), which is currently used as a pre-metal dielectric (PMD) for sub 50 nm. Two spin-on candidates are considered, out of which one contains four weight percent (wt.%) of phosphor. First, their material properties are discussed and then their integration challenges are presented. Particularly, issues like thermal budget, direct CMP capability and compatibility to wet-cleans are explored. Then the suitable candidate is tested electrically.
ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2085–2088
											Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2085–2088
نویسندگان
												Arabinda Das, Momtchil Stavrev, Heike Prenz, Markus Schardin, Ines Uhlig, Werner Graf, Hans-Peter Sperlich,