کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540699 | 871333 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Overview of dual damascene integration schemes in Cu BEOL integration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
An overview of different dual damascene approaches is given. Three approaches – trench first, trench first with metal hardmask, and via first – are described in detail. Trench first is the easiest approach but due to its limitation only suitable for wide ground rules with moderate aspect ratios. Via first is capable to run fine pitches and/or higher aspect ratios but has many problems to reach a proper transition between trench and via. With respect to this transition the trench first with metal hardmask concept seems to be advantageous, but it has its own challenges and problems. This article describes our solutions to these problems.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2128–2132
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2128–2132
نویسندگان
J. Kriz, C. Angelkort, M. Czekalla, S. Huth, D. Meinhold, A. Pohl, S. Schulte, A. Thamm, S. Wallace,