کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540710 871333 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysis
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysis
چکیده انگلیسی

The behaviour of submicron damascene copper lines raises a number of fundamental issues such as grain growth in narrow trenches, thermomechanical properties of copper in these confined geometries, etc. This experimental study is aimed at evaluating the influence of annealing, polishing and line width on the room temperature strain and texture of narrow copper damascene lines. X-ray diffraction has been performed on arrays of lines with widths ranging between 3 μm and 0.09 μm. Two annealing conditions (150 °C and 400 °C) have been used either prior or after Chemical Mechanical Polishing (CMP). A clear influence of the Cu overburden on the in-line microstructure is evidenced. X-ray diffraction analysis shows that strains in line longitudinal direction are higher in those annealed at 400 °C and decrease with the width of the lines.Effect of CMP on structure and relationship between both texture and strain and temperature of thermal treatments is discussed in light of these observations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2175–2178
نویسندگان
, , , , ,