کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540818 | 871344 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45 nm node
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
With the dimensions scaling down at each new technology node, introduction of porous dielectric materials is required to reduce the interconnect capacitance. Nevertheless, these materials are very prone to damage during integration, thus increasing their K-value (2.5 as deposited for the 45 nm node) in the final circuit. In order to characterize these effects, high-frequency measurements and electromagnetic simulations were carried out on specific microstrip structures. Taking into account typical circuit characteristics, time-domain extraction of delay values and crosstalk levels were then performed, enabling a precise analysis of moisture uptake effects from a performance point of view.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 11, November 2007, Pages 2744–2749
Journal: Microelectronic Engineering - Volume 84, Issue 11, November 2007, Pages 2744–2749
نویسندگان
M. Gallitre, B. Blampey, B. Fléchet, A. Farcy, V. Arnal, C. Bermond, T. Lacrevaz, J. Torres,