کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540829 871349 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Abnormal metal oxide formation induced by residual charging in plasma etch process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Abnormal metal oxide formation induced by residual charging in plasma etch process
چکیده انگلیسی

Electron cyclotron resonance plasma with SF6 and Cl2 gas mixture were used for tungsten plug etch-back processes. The properties of electric contacts between tungsten plugs and Al/Ti/TiN interconnect lines, fabricated by this etching process, have been studied. Particles and abnormal oxide layers at the plug/line interfaces have been found to be the main factor to cause deterioration of the electric contacts. Mechanisms for particle transportation and metal oxide formation have been proposed. The phenomenon was attributed to the residual charging effect, which occurred immediately after the plasma power being turned off. A technique to prevent the residual charging induced tungsten oxide growth has been developed and applied in industrial fabrication lines.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 1, January 2007, Pages 1–6
نویسندگان
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