کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540840 | 871349 | 2007 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Comparison of dicarboxylic acids as complexing agents for abrasive-free chemical mechanical planarization of copper Comparison of dicarboxylic acids as complexing agents for abrasive-free chemical mechanical planarization of copper](/preview/png/540840.png)
Abrasive particles used in chemical mechanical planarization (CMP) of copper often agglomerate and cause scratches on the finished surface. Abrasive-free CMP offers a feasible solution to this problem, and our present work examines four dicarboxylic acids (oxalic, malonic, succinic and glutaric, with increasing carbon chain lengths) as possible complexing agents for such a chemically dominated CMP process. At pH 3.0–4.0, oxalic and malonic acids are most effective for abrasive-free Cu removal. The rates of Cu dissolution and polish (with or without abrasives) are correlated with pH dependent distributions of mono-anionic (for oxalic and malonic) and neutral (for succinic and glutaric) acid species. The surface morphologies of a Cu wafers obtained by abrasive-free CMP in these acids also are more defect free and flat compared to those obtained using abrasives.
Journal: Microelectronic Engineering - Volume 84, Issue 1, January 2007, Pages 80–86