کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540848 | 871349 | 2007 | 7 صفحه PDF | دانلود رایگان |

A new silated acidic polymer was developed as the resist for nanoimprint lithography on flexible substrates. This polymer was synthesized from methylmethacrylate, n-butylacrylate, methacrylic acid and 3-[tris(trimethylsiloxy)silyl]propyl methacrylate by free radical copolymerization with an azobisisobutyronitrile (AIBN) initiator at 90 °C. The resist has excellent reactive ion etching (RIE) resistability, a lower Tg (43 °C) compared to poly(methyl methacrylate) (PMMA) and good flowability. It is suitable to use on flexible plastic substrates. The resist can be easily removed by an aqueous base solution at the final stripping step, instead of using an organic solvent or RIE. A 100 nm/50 nm (line/space) feature pattern was obtained on a flexible polyethylene terephthalate (PET)/ITO substrate.
Journal: Microelectronic Engineering - Volume 84, Issue 1, January 2007, Pages 129–135