Patterning nanoscale features using the 2-step NERIME nanolithography process

The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam top surface imaging process is a novel nanolithography technique for creating nanometer scale resist features using conventional DNQ/novolak resists. We present 90 nm resist critical dimensions (CDs) over substrate topography using the 2-step NERIME process. We also demonstrate, for the first time, fabrication of 80 nm etched features masked using the 2-step NERIME process. The etched nanoscale features exhibit minimal line edge roughness and excellent profile control, and demonstrate the suitability of the 2-step NERIME process as a nanolithography technique for applications requiring nanometer CD and profile control.