Direct pattern transfer for sub-45 nm features using nanoimprint lithography

Recent advancements made in step and flash imprint lithography (S-FIL) have enhanced the attractiveness of nanoimprint technology for sub-100 nm resolution. Improvements in the area of material dispensing and refinement of the etch barrier itself have resulted in more uniform printing while producing a much thinner residual layer. These improvements, coupled with changes to the etch processes have facilitated direct pattern transfer of sub-45 nm line/space (1:3) features. This leading-edge research could define the pathway for nanoimprint to become a competitive solution for advanced high resolution pattern transfer.