کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540958 1450400 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Advances in microchannel amplifiers for maskless lithography
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Advances in microchannel amplifiers for maskless lithography
چکیده انگلیسی

Arradiance is developing a novel approach for achieving the high brightness and intra-field beam uniformity required for volume production electron beam maskless lithography. The goal is to utilize an electron multiplying array operating in saturation to amplify, stabilize and control the output of an array of cold cathodes. The authors discuss advancements in both theoretical and experimental methods to characterize and optimize the channel structure of silicon based microchannel amplifiers (MCAs) operating both near and in deep saturation. Combined with experimental data from fabricated prototypes, this paper reports the recent results of new methodologies in modeling on both a macroscopic and a microscopic scale. This will enable the prediction and optimization of key operational parameters. In addition, new experimental methodologies have been developed to quantify the transfer characteristics of individual channels within large arrays. These new methods offer the high level of predictive capability required for both device optimization and fabrication control necessary to achieve lithography level source performance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issues 4–9, April–September 2006, Pages 990–993
نویسندگان
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