کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541322 | 1450361 | 2014 | 4 صفحه PDF | دانلود رایگان |
• The kinetics of growth and consumption of Ni-rich phases are investigated.
• The life time of θ-Ni2Si depends on the initial Ni thickness.
• A slow kinetic of consumption of θ-Ni2Si is observed for thin Ni film.
• A fast rate of consumption of θ-Ni2Si is observed when θ-Ni2Si is a transient phase.
• The results are interpreted in terms of thermodynamics and kinetics.
In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni2Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni2Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni2Si is observed when θ-Ni2Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed.
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Journal: Microelectronic Engineering - Volume 120, 25 May 2014, Pages 146–149