کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541324 1450361 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices
چکیده انگلیسی


• A NiPt silicide stable with long 600 and 800 °C anneals, as required by DRAM periphery.
• Thermally stable silicide by pre-amorphisation + C implant + laser anneal.
• TSS successfully integrated in low voltage CMOS HKMG devices suitable for DRAM PERI.
• Thermal stability can be obtained using a spike anneal rather than a laser anneal.

In comparison to standard CMOS devices for logic applications, periphery devices for DRAMs typically require a long anneal in the temperature range between 600 and 800 °C after the silicide formation. This gives additional constraints in many process steps, in particular in the silicidation step. In this work the feasibility and optimization of a thermally stable NiPt silicide has been investigated. First, a blanket wafer study has been done showing that a thermally stable silicide (TSS) can be obtained by using a pre-amorphization implant (PAI) + C implant + laser anneal prior to the silicidation process, and a superior thermal stability can be obtained using a spike anneal rather than a laser anneal. Then, this silicide was successfully integrated in low voltage CMOS HKMG devices (Lgate down to 32 nm) without affecting the junction behavior, and featuring only minor effects on devices performance compared to a non-stabilized NiPt silicide without DRAM anneal, with applicability in a replacement metal gate process flow.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 120, 25 May 2014, Pages 157–162
نویسندگان
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