کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541437 871468 2010 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Three-solenoid windings transformer baluns on CMOS-grade silicon substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Three-solenoid windings transformer baluns on CMOS-grade silicon substrate
چکیده انگلیسی

Several novel on-chip three-solenoid windings transformer baluns were designed and fabricated using post-CMOS compatible concave-suspending micromachining process, which are applicable in the design of radio-frequency integrated circuits (RFICs). A generalized lumped-element circuit model (LECM) is developed to accurately characterize input and output characteristics of these three-port signal conversion devices, with the partial element equivalent circuit (PEEC) method implemented for capturing skin and proximity effects in them. Satisfactory agreements are obtained among the measured, simulated, and modeled S-parameters of the fabricated baluns over the frequency range of 500 MHz–10 GHz. Measurements show that these baluns exhibit less than 1 dB amplitude imbalance and less than 1° phase imbalance up to 6 GHz. Their power transfer and impedance matching are also examined in details.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 2, February 2010, Pages 150–158
نویسندگان
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