کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541667 | 871483 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe–PbSrSe MQW structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe–PbSrSe MQW structure Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe–PbSrSe MQW structure](/preview/png/541667.png)
چکیده انگلیسی
Fabrication of microrods from multi-quantum well (MQW) PbSe–PbSrSe structure grown in molecular beam epitaxy (MBE) followed by its morphological as well as optical characterizations are described. Pulsed PL intensity is increased by 64 times per unit surface area from a free-standing MQW microrod mounted on copper heat sink compared with the bulk sample. Enhancement in side emission power due to the higher optical confinement effect during pulsed photoluminescence (PL) from MQW semiconductor microtube inserted in hollow quartz optical fiber signifies that these microstructures are robust in nature and crucial contenders for portable mid-infrared optoelectronic devices to be used in the field of industrial trace-gas sensing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 4, April 2008, Pages 665–669
Journal: Microelectronic Engineering - Volume 85, Issue 4, April 2008, Pages 665–669
نویسندگان
S. Mukherjee, S. Jain, F. Zhao, J.P. Kar, D. Li, Z. Shi,