کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541680 | 871484 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
A review of literature combined with recent experimental results addressing the intrinsic and extrinsic factors controlling the effective work function (EWF) of metal gate electrodes on Hf-based high-K dielectrics is discussed. Through a systematic study including accurate extraction of EWF, our observations suggest, unlike popularly perceived, intrinsic Ef-pinning does not limit the EWF tuning on high-K. Also, a critical issue challenging the maintenance of high EWF metals at low effective oxide thicknesses (EOT), due to a new phenomena described as the “Vfb roll-off”, is reported for the first time.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 1, January 2008, Pages 2–8
Journal: Microelectronic Engineering - Volume 85, Issue 1, January 2008, Pages 2–8
نویسندگان
Huang-Chun Wen, Prashant Majhi, Kisik Choi, C.S. Park, Husam N. Alshareef, H. Rusty Harris, Hongfa Luan, Hiro Niimi, Hong-Bae Park, Gennadi Bersuker, Patrick S. Lysaght, Dim-Lee Kwong, S.C. Song, Byoung Hun Lee, Raj Jammy,