کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541699 | 871484 | 2008 | 5 صفحه PDF | دانلود رایگان |

The dielectric breakdown field is one of the important concerns for device reliability. The breakdown of dielectric is originated at a fatal flaw that grows to cause failure and can be explained by the weakest-link theory. In this study, metal-insulator-metal (MIM) capacitors with plasma enhanced chemical vapor deposited (PECVD) SiNx are prepared. Ammonia (NH3) plasmas are applied after the deposition of the dielectric SiNx. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of the electrode area as well as the plasma treatment on the breakdown of the MIM capacitors. The time dependent dielectric breakdown testing indicates a decrease in both the leakage current and the lifetime of the MIM capacitors treated with plasma. Possible dielectric degradation mechanisms are explored.
Journal: Microelectronic Engineering - Volume 85, Issue 1, January 2008, Pages 110–114