کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5418515 | 1506950 | 2008 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bridging effect on structural and optoelectronic properties of oligothiophene
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
In this paper, we report on a theoretical study of structural and electronic properties of some oligothiophenes based on cylopentadithiophene (CPDT) dimers in which both 3,3Ⲡpositions were bridged with (CH2, SiH2, C(CN)2, S, CO, CS, CCH2, and CC(CN)2). The important reduction of the gap energy observed for the whole series of the bridged compounds studied here, is explained on the basis of an orbital interaction analysis. Computations were performed by using density functional theory (DFT) calculations. The compounds bridged by CS and CC(CN)2 have small Eg = LUMO-HOMO gaps suggesting that these compounds have optoelectronic application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Molecular Structure: THEOCHEM - Volume 851, Issues 1â3, 28 February 2008, Pages 254-262
Journal: Journal of Molecular Structure: THEOCHEM - Volume 851, Issues 1â3, 28 February 2008, Pages 254-262
نویسندگان
S.M. Bouzzine, A. Makayssi, M. Hamidi, M. Bouachrine,