کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5418515 1506950 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bridging effect on structural and optoelectronic properties of oligothiophene
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Bridging effect on structural and optoelectronic properties of oligothiophene
چکیده انگلیسی
In this paper, we report on a theoretical study of structural and electronic properties of some oligothiophenes based on cylopentadithiophene (CPDT) dimers in which both 3,3′ positions were bridged with (CH2, SiH2, C(CN)2, S, CO, CS, CCH2, and CC(CN)2). The important reduction of the gap energy observed for the whole series of the bridged compounds studied here, is explained on the basis of an orbital interaction analysis. Computations were performed by using density functional theory (DFT) calculations. The compounds bridged by CS and CC(CN)2 have small Eg = LUMO-HOMO gaps suggesting that these compounds have optoelectronic application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Molecular Structure: THEOCHEM - Volume 851, Issues 1–3, 28 February 2008, Pages 254-262
نویسندگان
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